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Inward Diffusion of Oxygen on a Silicon Surface 

作成者 星野, 忠次, Nishioka, Y.
作成者の別表記 Hoshino, Tyuji
日本十進分類法 (NDC) 435
内容 Cluster computations with the density functional theory were performed to clarify the diffusion mechanism of an O atom adsorbed on a Si surface. The activation energy required for the oxygen diffusion into the Si substrate is estimated to be 1.6 eV, which is fairly small compared to oxygen diffusion within a Si crystal. The presence of a surface dangling bond is responsible for the lowering of the activation energy, assisting the generation of an intermediate which is involved in the rearrangement of the Si-O connections. Adsorption of another O atom on the Si surface appears to further enhance the inward oxygen diffusion.
コンテンツの種類 雑誌掲載論文 Journal Article
DCMI資源タイプ text
ファイル形式 application/pdf, application/x-dvi
ハンドルURL http://mitizane.ll.chiba-u.jp/meta-bin/mt-pdetail.cgi?cd=00020941
DOI 10.1103/PhysRevLett.84.4633
掲載誌情報 Physical Review Letters Vol.84 page.4633-4636 (2000)
フルテキストへのリンク http://mitizane.ll.chiba-u.jp/metadb/up/C0000050237/PRL04633.pdf, http://mitizane.ll.chiba-u.jp/metadb/up/green2005/2005THoshino.dvi
言語 英語
関連情報 (hasVersion) http://dx.doi.org/10.1103/PhysRevLett.84.4633


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