Etching Examination for the Scratched Wafer of Silicon Single Crystal   :   引っかき傷づけしたシリコン単結晶板の腐食法による研究 

作成者 砂田, 淳二
作成者 (ヨミ) スナダ, ジュンジ
作成者の別表記 Sunada, Junji
日本十進分類法 (NDC) 370
内容 Etching examination is made for the scratched wafer of silicon single crystal with Dash etchant. With the scratch without microcrack (load of 100 g), rapid eching is observed in the surface layer of the scratch, of the order of 0.3 μm in thickness, and this suggests that some defects are induced in the layer. With the scratches accompanied with microcracks (200 g and 300 g loads), the remarkable distortion in the surrounding of the scratch is re-moved by light etching and especially deep etching is observed in the microcrack. This give a evidence for the poor heading of the microcrack. Etch pits are observed in the etched furrow in front of the microcrack but it is difficult to relate the pit with dislocation. The elastic character of the distortion is due to the poor healing of microcracks.
公開者 千葉大学教育学部
コンテンツの種類 紀要論文 Departmental Bulletin Paper
DCMI資源タイプ text
ファイル形式 application/pdf
ISSN 0577-6856
NCID AN00179534
掲載誌情報 千葉大学教育学部研究紀要. 第2部 Vol.26 page.1-6 (19771220)
情報源 Bulletin of the Faculty of Education, Chiba University. Part II
言語 英語
著者版フラグ publisher

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